Characterization of hot-carrier degraded SiGe/Si-hetero-PMOSFETs

Toshiaki Tsuchiya, Masao Sakuraba, Junichi Murota

研究成果: Article査読

5 被引用数 (Scopus)

抄録

Hot-carrier degraded SiGe/Si-hetero-pMOSFETs have been characterized. The degradation of transconductance and the threshold voltage shift after hot-carrier stress are discussed based upon the changes in the densities of SiGe/Si hetero-interface traps and gate-oxide interface traps, which have been evaluated using a unique low-temperature charge-pumping method. It is concluded that the increase in the maximum transconductance and the threshold-voltage shift after a hot carrier stress are mainly due to trapped electrons in the gate oxide near the drain, and the decrease in transconductance, dependent on the gate voltage, is considered to be due to generated SiGe/Si hetero-interface traps.

本文言語English
ページ(範囲)326-328
ページ数3
ジャーナルThin Solid Films
508
1-2
DOI
出版ステータスPublished - 2006 6 5

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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