Characterization of > 300 GHz transistors using a novel optoelectronic network analyzer

Nabil Sahri; Tadao Nagatsuma; Taiichi Otsuji; Naofumi Shimizu; Makoto Yaita

Characterization of > 300 GHz transistors using a novel optoelectronic network analyzer

Nabil Sahri, Tadao Nagatsuma, Taiichi Otsuji, Naofumi Shimizu, Makoto Yaita

研究成果: Article › 査読

抄録

A novel practical optoelectronic network analyzer with over 300-GHz bandwidth was developed and was successfully used to measure over 100-GHz HEMT S-parameters.

本文言語	English
ページ（範囲）	194-196
ページ数	3
ジャーナル	Springer Series in Chemical Physics
巻	63
出版ステータス	Published - 1998 12 1
外部発表	はい

ASJC Scopus subject areas

物理化学および理論化学

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title = "Characterization of > 300 GHz transistors using a novel optoelectronic network analyzer",

abstract = "A novel practical optoelectronic network analyzer with over 300-GHz bandwidth was developed and was successfully used to measure over 100-GHz HEMT S-parameters.",

author = "Nabil Sahri and Tadao Nagatsuma and Taiichi Otsuji and Naofumi Shimizu and Makoto Yaita",

year = "1998",

month = dec,

day = "1",

language = "English",

volume = "63",

pages = "194--196",

journal = "Springer Series in Chemical Physics",

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AU - Sahri, Nabil

AU - Nagatsuma, Tadao

AU - Otsuji, Taiichi

AU - Shimizu, Naofumi

AU - Yaita, Makoto

PY - 1998/12/1

Y1 - 1998/12/1

N2 - A novel practical optoelectronic network analyzer with over 300-GHz bandwidth was developed and was successfully used to measure over 100-GHz HEMT S-parameters.

AB - A novel practical optoelectronic network analyzer with over 300-GHz bandwidth was developed and was successfully used to measure over 100-GHz HEMT S-parameters.

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EP - 196

JO - Springer Series in Chemical Physics

JF - Springer Series in Chemical Physics

SN - 0172-6218

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Characterization of > 300 GHz transistors using a novel optoelectronic network analyzer

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