Fe silicide growth on a Si(111) surface has been characterized by Weissenberg RHEED. The silicides were grown in the present study via two fundamental methods, reactive deposition epitaxy (RDE) and solid phase epitaxy (SPE), with various deposition amounts of Fe. The silicide species and its epitaxial orientation were determined from three-dimensional diffraction patterns obtained using Weissenberg RHEED. It was found that only α-FeSi2 islands grew by the RDE method. Both α-FeSi 2 and β-FeSi2 islands grew by the SPE method. The proportion of β-FeSi2 increased with increasing Fe deposition amount, until only β-FeSi2 was finally observed. The present results could be explained by the surface or interface reaction model wherein the reaction at the Si surface and at the Fe/Si solid interface caused α-FeSi2 and β-FeSi2 growth, respectively.
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