A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.
|ジャーナル||IEICE Transactions on Electronics|
|出版ステータス||Published - 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering