Characterization of extrinsic oxide breakdown on thin dielectric oxide

Katsuya Shiga, Junko Komoru, Masafumi Katsumata, Akinobu Teramoto, Yoji Mashiko

研究成果: Article査読

1 被引用数 (Scopus)

抄録

A new method using new test structure, which is connected 15.4 million MOS transistor, for evaluating extrinsic oxide breakdown is proposed. The active gate area which is needed to predict reliability will be shown. And by using this new method, activation energy not only for the intrinsic breakdown but also for the extrinsic breakdown are obtained.

本文言語English
ページ(範囲)589-592
ページ数4
ジャーナルIEICE Transactions on Electronics
E82-C
4
出版ステータスPublished - 1999

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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