Characterization of deposited materials formed by focused ion beam-induced chemical vapor deposition using AuSi alloyed metal source

Focused ion beam-induced chemical vapor deposition (FIB-CVD) using Au or Si FIBs with phenanthrene gas was performed to obtain Ga-free carbonaceous materials. The characterization of the deposited materials was investigated by atomic force microscopy, Raman scattering spectroscopy, fluorescent X-ray analysis, and Auger electron spectroscopy. The surface of the deposited film using the Au FIBs was found to be very smooth, and the structure of the deposited material was found to be amorphous-like carbon. Although a Ga-free carbonaceous film was formed, it was found that Au or Si atoms were included, instead of Ga, in the deeper region of the deposited materials than the projected range of the ions of such atoms, resulting in the formation of a double-layer structure in the deposited materials, indicating that the events that occurred in FIB-CVD using the Au or Si FIBs were similar to those in the same process using the Ga FIBs. However, it was also found that the behaviour of the incorporated Au atoms in the deposited films by annealing was different from that of the Ga atoms.