Characterization of Cu buffer layers for growth of L10 -FeNi thin films

M. Mizuguchi, S. Sekiya, K. Takanashi

研究成果: Article査読

26 被引用数 (Scopus)

抄録

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L 10 -FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu 3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L 10 -FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L 10 -FeNi thin films.

本文言語English
論文番号09A716
ジャーナルJournal of Applied Physics
107
9
DOI
出版ステータスPublished - 2010 5 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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