Characterization of chemically vapor deposited manganese barrier layers using X-ray absorption fine structure

James M. Ablett, Christopher J. Wilson, Nguyen Mai Phuong, Junichi Koike, Zsolt Tokei, George E. Sterbinsky, Joseph C. Woicik

研究成果: Article

5 引用 (Scopus)

抜粋

Chemical vapor deposition of manganese (CVD-Mn) on silicon dielectrics allows the growth of manganese silicate/oxide for use as an effective barrier material for Cu interconnects and is currently under intense evaluation for integration into future sub-22 nm technology. Employing fluorescence X-ray absorption fine structure (XAFS) measurements, we explore the chemical and structural makeup of the barrier layer formation on both SiO 2 and low-k dielectrics.

元の言語English
記事番号05EB01
ジャーナルJapanese journal of applied physics
51
発行部数5 PART 2
DOI
出版物ステータスPublished - 2012 5 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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