Characterization and reliability of 3D LSI and SiP

K. W. Lee, M. Murugesan, Jichel Bea, T. Fukushima, T. Tanaka, M. Koyanagi

研究成果: Conference contribution

1 被引用数 (Scopus)

抄録

Reliability challenges in 3D LSI associated with mechanical constraints induced by Cu TSVs, μ-bumps and crystal defects, crystallinity in thinned Si wafer and metal contamination induced by Cu diffusion from TSVs and thinned backside surface are mainly discussed. Mechanical stresses induced by Cu TSVs and μ-bumps are strongly dependent on design rules and process parameters. DRAM retention characteristics were severely degraded by Si thinning, especially below 30 μm thickness. Minority carrier lifetime was seriously degraded by Cu diffusion from Cu TSVs as the blocking property of barrier layer in TSV is not sufficient. A dry polish (DP) treatment produced a superior extrinsic gettering (EG) layer to Cu diffusion at the backside. We suggest the nondestructive failure analysis using X-ray CT-scan to characterize TSVs connection and μ-bumps joining in 3D stacked LSIs.

本文言語English
ホスト出版物のタイトル2013 IEEE International Electron Devices Meeting, IEDM 2013
ページ7.2.1-7.2.4
DOI
出版ステータスPublished - 2013 12 1
イベント2013 IEEE International Electron Devices Meeting, IEDM 2013 - Washington, DC, United States
継続期間: 2013 12 92013 12 11

出版物シリーズ

名前Technical Digest - International Electron Devices Meeting, IEDM
ISSN(印刷版)0163-1918

Other

Other2013 IEEE International Electron Devices Meeting, IEDM 2013
CountryUnited States
CityWashington, DC
Period13/12/913/12/11

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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