Characteristics of nano-grating N-channel MOSFETs for improved current drivability

Xiaoli Zhu, Shin Ichiro Kuroki, Koji Kotani, Hideharu Shido, Masatoshi Fukuda, Yasuyoshi Mishima, Takashi Yto

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Drivability-improved MOSFETs were successfully fabricated by using nano-grating silicon wafers. There was almost no additional process change in device fabrication when the height of the gratings was less than the conventional macroscopic wafer surface roughness. The MOSFETs with the grating height of 35 nm showed 21 % improvement in current drivability compared to the conventional one with the same device occupancy area. And the roll-off characteristic of threshold voltage of nano-grating device held the line of conventional one in despite of the 3-D channel structure. The technology provides great advantages for drivability improvement without paying much tradeoff of process cost. This proposal will be useful to CMOS-LSIs with high performance in general.

本文言語English
ページ(範囲)1830-1836
ページ数7
ジャーナルIEICE Transactions on Electronics
E90C
9
DOI
出版ステータスPublished - 2007 9 1

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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