Characteristics of metal-oxide-semiconductor field-effect transistors with a functional gate using trap charging for ultralow power operation

Takashi Kudo, Takashi Ito, Anri Nakajima

研究成果: Article査読

1 被引用数 (Scopus)

抄録

A functional gate metal-oxide-semiconductor field-effect transistor that enables self-adjustment of threshold voltage (Vth) was developed for the ultralow power operation. The operating principle enables the on-current to be increased without increasing the off-current. Prototype devices were fabricated with complementary metal-oxide-semiconductor (CMOS) fabrication technology using a silicon-on-insulator substrate, and the fundamental device characteristics necessary for ultralow power operation were demonstrated with an emphasis on the device reliability. A negative Vth shift was caused by electron ejection from the poly-Si charge trap layer, and a positive V th shift was caused by electron injection from the top gate electrode. A fabricated device endured 105 electron ejection-and-injection cycles when only a positive bias Vg was applied. Endurance characteristics of the fabricated devices showed that the number of cycles to oxide breakdown increased as the channel size decreased. The authors explained the SiO2 breakdown mechanism by using a percolation model. They consider that scaling down of the channel size and the thickness of the tunnel gate oxide will open the way to the development of CMOS logic applications for this device.

本文言語English
論文番号012206
ジャーナルJournal of Vacuum Science and Technology B:Nanotechnology and Microelectronics
31
1
DOI
出版ステータスPublished - 2013 1
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 器械工学
  • プロセス化学およびプロセス工学
  • 表面、皮膜および薄膜
  • 電子工学および電気工学
  • 材料化学

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