Characteristics of electron beam-evaporated high κ-TiOx thin films on n-GaAs

Yutaka Oyama, Takeo Ohno, Taiji Sato, Jun Ichi Nishizawa

研究成果: Conference article査読

1 被引用数 (Scopus)

抄録

Electrical and structural evaluations have been performed on high-k TiOx dielectrics which had been deposited on {001} oriented n-GaAs at 100 °C by electron beam evaporation of TiO2 in a mixed atmosphere of O2/Ar. A permittivity, εs, as high as 100 has been achieved, and a breakdown field strength of 0.5 MV/cm has been obtained. Room temperature transistor action was realized utilising a p +n+ tunnel transistor with TiOx gate dielectric, both in enhancement and depletion mode operation.

本文言語English
ページ(範囲)1723-1726
ページ数4
ジャーナルPhysica Status Solidi (C) Current Topics in Solid State Physics
4
5
DOI
出版ステータスPublished - 2007 12 1
イベント33rd International Symposium on Compound Semiconductors, ISCS-2006 - Vancouver, BC, Canada
継続期間: 2006 8 132006 8 17

ASJC Scopus subject areas

  • 凝縮系物理学

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