CHARACTERISATION OF THERMAL INSTABILITY IN GaAs-AlAs AND GaAs-InAs SUPERLATTICES WITH LASER RAMAN SPECTROSCOPY.

K. Kakimoto, H. Ohno, R. Katsumi, Y. Abe, H. Hasegawa, T. Katoda

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Thermal instability of GaAs-AlAs and GaAs-InAs superlattices was studied by Raman spectroscopy. Samples with various periods and grown at various temperatures were investigated to understand the stability of interface in superlattice and to obtain an activation energy of mixing by thermal annealing. Mixing occurred more easily in GaAs-InAs strained superlattice than GaAs-AlAs strain-free superlattice. Samples grown at a lower temperature are more stable against thermal annealing than those grown at a higher temperature.

本文言語English
ホスト出版物のタイトルInstitute of Physics Conference Series
編集者B. de Cremoux
ページ253-258
ページ数6
74
出版ステータスPublished - 1985
外部発表はい

出版物シリーズ

名前Institute of Physics Conference Series
番号74
ISSN(印刷版)0373-0751

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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