We demonstrated the RF integrated noise suppressor and thin-film inductor using ferromagnetic film. The transmission parameter (S 21) of the integrated noise suppressor was compared with that of the nonintegrated noise suppressor. The magnitude of signal attenuation at the resonance point was greatly increased by the integration up to -30 and -57 dB for the 1-μm-thick and 2-μm-thick CoNbZr films, respectively. The closed magnetic circuit type GHz-drive integrated spiral inductors were fabricated with a four-turn and 380 × 380 μm2 two-port-type inductor with ground guards, which consisted of a sandwich 2-μm-thick Cu coil in between a patterned 1-μm-thick CoNbZr film. The 10/3 (line/space [μm]) designs with 2-μm-thick SiO2 insulating layers exhibited a quality factor Q = 14.7, being highest among the published data at 1 GHz.
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