Change of the electronic conductivity of cnts and graphene sheets caused by a three-dimensional strain field

Masato Ohnishi, Ken Suzuki, Hideo Miura

研究成果: Conference contribution

抄録

The prediction of the change in the conductivity of carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) under strain is very important to assure the reliability of the performance of CNT-based devices, such as transistors, sensors, actuators, etc. In this study, the change of the electronic state of CNTs and GNRs caused by their deformation was analyzed. We found that the change of the electronic sate of CNTs was mainly dominated by two factors; (a) distortion of a six-membered ring due to the change in the C-C bond length and (b) increase in the local curvature of the tube. The increase of the curvature caused the orbital hybridization. The electronic state of GNRs also changed drastically when the hybridization was occurred by the curvature deformation.

本文言語English
ホスト出版物のタイトルInternational Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
出版社Institute of Electrical and Electronics Engineers Inc.
ページ86-89
ページ数4
ISBN(電子版)9780615717562
出版ステータスPublished - 2012
イベント2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 - Denver, United States
継続期間: 2012 9月 52012 9月 7

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD

Conference

Conference2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
国/地域United States
CityDenver
Period12/9/512/9/7

ASJC Scopus subject areas

  • 電子工学および電気工学
  • コンピュータ サイエンスの応用
  • モデリングとシミュレーション

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