TY - GEN
T1 - Change of the electronic conductivity of cnts and graphene sheets caused by a three-dimensional strain field
AU - Ohnishi, Masato
AU - Suzuki, Ken
AU - Miura, Hideo
N1 - Publisher Copyright:
© 2012 IEEE.
PY - 2012
Y1 - 2012
N2 - The prediction of the change in the conductivity of carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) under strain is very important to assure the reliability of the performance of CNT-based devices, such as transistors, sensors, actuators, etc. In this study, the change of the electronic state of CNTs and GNRs caused by their deformation was analyzed. We found that the change of the electronic sate of CNTs was mainly dominated by two factors; (a) distortion of a six-membered ring due to the change in the C-C bond length and (b) increase in the local curvature of the tube. The increase of the curvature caused the orbital hybridization. The electronic state of GNRs also changed drastically when the hybridization was occurred by the curvature deformation.
AB - The prediction of the change in the conductivity of carbon nanotubes (CNTs) and graphene nanoribbons (GNRs) under strain is very important to assure the reliability of the performance of CNT-based devices, such as transistors, sensors, actuators, etc. In this study, the change of the electronic state of CNTs and GNRs caused by their deformation was analyzed. We found that the change of the electronic sate of CNTs was mainly dominated by two factors; (a) distortion of a six-membered ring due to the change in the C-C bond length and (b) increase in the local curvature of the tube. The increase of the curvature caused the orbital hybridization. The electronic state of GNRs also changed drastically when the hybridization was occurred by the curvature deformation.
KW - Carbon nanotube
KW - Conductivity
KW - DFT
KW - Graphene nanoribbon
KW - Strain
KW - Tight-binding approach
UR - http://www.scopus.com/inward/record.url?scp=85088030464&partnerID=8YFLogxK
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M3 - Conference contribution
AN - SCOPUS:85088030464
T3 - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
SP - 86
EP - 89
BT - International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012 Proceedings
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2012 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2012
Y2 - 5 September 2012 through 7 September 2012
ER -