Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent

Naoyoshi Komatsu, Takeshi Mitani, Tetsuo Takahashi, Tomohisa Kato, Kazuhisa Kurashige, Yuji Matsumoto, Toru Ujihara, Hajime Okumura

研究成果: Conference contribution

3 引用 (Scopus)

抜粋

In solution growth of 4H-SiC, we have investigated changes in macrostep height with addition of the Group III (B, Al, Ga), Group IV (Ge, Sn), Group V (N) elements, and transition metals (Ti, V, Cr, Ni) to Si solvents, in order to find additives improving severe step bunching which often occurs during growth. The addition of Al, B, Sn, N, and V decreased the average macrostep height compared with the crystal grown with Si solvents. The addition of Al, B, Sn, N, and V suppressed the generation of trench-shaped surface defects in long-term growth of 10 hours. This result demonstrated that the addition of Al, B, Sn, N, and V has an advantage to achieve high quality bulk crystal growth from solution.

元の言語English
ホスト出版物のタイトルSilicon Carbide and Related Materials 2014
編集者Didier Chaussende, Gabriel Ferro
出版者Trans Tech Publications Ltd
ページ14-17
ページ数4
ISBN(印刷物)9783038354789
DOI
出版物ステータスPublished - 2015 1 1
イベントEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014 - Grenoble, France
継続期間: 2014 9 212014 9 25

出版物シリーズ

名前Materials Science Forum
821-823
ISSN(印刷物)0255-5476
ISSN(電子版)1662-9752

Other

OtherEuropean Conference on Silicon Carbide and Related Materials, ECSCRM 2014
France
Grenoble
期間14/9/2114/9/25

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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  • これを引用

    Komatsu, N., Mitani, T., Takahashi, T., Kato, T., Kurashige, K., Matsumoto, Y., Ujihara, T., & Okumura, H. (2015). Change in surface morphology by addition of impurity elements in 4H-SiC solution growth with Si solvent. : D. Chaussende, & G. Ferro (版), Silicon Carbide and Related Materials 2014 (pp. 14-17). (Materials Science Forum; 巻数 821-823). Trans Tech Publications Ltd. https://doi.org/10.4028/www.scientific.net/MSF.821-823.14