TY - GEN
T1 - Challenges of high-robustness self-assembly with Cu/Sn-Ag microbump bonding for die-to-wafer 3D integration
AU - SuZuki, Taku
AU - Asami, Kazushi
AU - Kitamura, Yasuhiro
AU - Fukushima, Takafumi
AU - Nagai, Chisato
AU - Bea, Jichoel
AU - Sato, Yutaka
AU - Murugesan, Mariappan
AU - Lee, Kang Wook
AU - Koyanagi, Mitsumasa
N1 - Publisher Copyright:
© 2015 IEEE.
PY - 2015/7/15
Y1 - 2015/7/15
N2 - We demonstrated surface tension-driven self-assembly of chips with Cu/Sn-Ag microbumps in order to satisfy requirements for both high throughput and high alignment accuracy toward 3D system integration. The chips were singulated with different dicing methods: standard single-cut, precise single-cut, and modified step-cut. The alignment accuracies were compared among the three methods. The chips obtained by modified step-cut were precisely aligned within approximately 2 μm and comparable to that obtained by precise single-cut. By optimizing liquid volumes, the step-cut chips having Cu/Sn-Ag microbumps were accurately self-assembled irrespective of microbump densities. The self-assembled chips were successfully bonded at 280°C by thermal compression. The Cu/Sn-Ag daisy chains indicated good electrical characteristics with a resistance of 35 mω/joint.
AB - We demonstrated surface tension-driven self-assembly of chips with Cu/Sn-Ag microbumps in order to satisfy requirements for both high throughput and high alignment accuracy toward 3D system integration. The chips were singulated with different dicing methods: standard single-cut, precise single-cut, and modified step-cut. The alignment accuracies were compared among the three methods. The chips obtained by modified step-cut were precisely aligned within approximately 2 μm and comparable to that obtained by precise single-cut. By optimizing liquid volumes, the step-cut chips having Cu/Sn-Ag microbumps were accurately self-assembled irrespective of microbump densities. The self-assembled chips were successfully bonded at 280°C by thermal compression. The Cu/Sn-Ag daisy chains indicated good electrical characteristics with a resistance of 35 mω/joint.
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U2 - 10.1109/ECTC.2015.7159615
DO - 10.1109/ECTC.2015.7159615
M3 - Conference contribution
AN - SCOPUS:84942108399
T3 - Proceedings - Electronic Components and Technology Conference
SP - 342
EP - 347
BT - 2015 IEEE 65th Electronic Components and Technology Conference, ECTC 2015
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 2015 65th IEEE Electronic Components and Technology Conference, ECTC 2015
Y2 - 26 May 2015 through 29 May 2015
ER -