Cellular structures in Czochralski-grown SiGe bulk crystal

I. Yonenaga, T. Taishi, Y. Ohno, Y. Tokumoto

研究成果: Article査読

16 被引用数 (Scopus)

抄録

A high purity SixGe1-x alloy (x0=0.89) 48 mm in length with a maximum diameter of 25 mm was grown by the Czochralski method. Development of the cellular structures was evaluated by observing growth striations in the crystal by means of X-ray topography and optical microscopy. Temporary and fatal cellular structures were detected. Two possible factors were distinguished as being responsible for the origin of the cell formations: an enhancement of the effective growth velocity and a gradual reduction of Si composition. Both factors lead to the occurrence of constitutional supercooling beyond the critical relation between growth velocity and alloy composition.

本文言語English
ページ(範囲)1065-1068
ページ数4
ジャーナルJournal of Crystal Growth
312
8
DOI
出版ステータスPublished - 2010 4月 1

ASJC Scopus subject areas

  • 凝縮系物理学
  • 無機化学
  • 材料化学

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