Cavity-through deep reactive ion etching of directly-bonded silicon wafers

Piljoong Kang, Shuji Tanaka, Masayoshi Esashi

研究成果: Conference contribution

5 被引用数 (Scopus)

抄録

Etched silicon wafers were directly bonded, and then the bonded silicon wafers were deeply etched by Bosch process through etched cavities. This cavity-through DRIE (deep reactive ion etching) was investigated after systematic study on plasma-assisted silicon direct bonding. The first half of this paper mainly reports the generation of voids in wafers directly bonded with N2 or O2 plasma treatment due to H2O release from hydroxy groups in low and high temperature annealing. The second half reports etch profiles and etch rates for cavity-through DRIE using different recipes. Cavity-through DRIE in conjunction with silicon direct bonding is practical and useful for multi-layer MEMS.

本文言語English
ホスト出版物のタイトルTRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems
ページ549-553
ページ数5
DOI
出版ステータスPublished - 2007 12 1
イベント4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07 - Lyon, France
継続期間: 2007 6 102007 6 14

出版物シリーズ

名前TRANSDUCERS and EUROSENSORS '07 - 4th International Conference on Solid-State Sensors, Actuators and Microsystems

Other

Other4th International Conference on Solid-State Sensors, Actuators and Microsystems, TRANSDUCERS and EUROSENSORS '07
CountryFrance
CityLyon
Period07/6/1007/6/14

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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