Cathodoluminescence study on ZnO and GaN

T. Sekiguchi, N. Ohashi, H. Yamane

    研究成果: Article査読

    9 被引用数 (Scopus)

    抄録

    Characterization of the defects in flux grown ZnO and GaN single crystals was done by means of spatially resolved cathodoluminescence spectroscopy. The line profile of the CL spectra reveals the distribution of the defects reflecting the history of crystallization. The detailed analysis of the spectra makes it possible to optimize the condition of the crystal growth. The distribution of the luminescence centers of ZnO at the grain boundary and the effect of annealing were discussed. The effect of plasma treatment on the luminescence property of ZnO and GaN was also studied. Hydrogen plasma strongly passivates the visible emission of ZnO crystal, while it does not affect the luminescence property of GaN.

    本文言語English
    ページ(範囲)171-182
    ページ数12
    ジャーナルSolid State Phenomena
    63-64
    DOI
    出版ステータスPublished - 1998

    ASJC Scopus subject areas

    • 原子分子物理学および光学
    • 材料科学(全般)
    • 凝縮系物理学

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