Cathodoluminescence study of nonuniformity in hydride vapor phase epitaxy-grown thick GaN films

Woong Lee, Kentaro Watanabe, Kazuhiro Kumagai, Seunghwan Park, Hyunjae Lee, Takafumi Yao, Jiho Chang, Takashi Sekiguchi

研究成果: Article査読

7 被引用数 (Scopus)

抄録

The nonuniformity in hydride vapor phase epitaxy (HVPE)-grown thick GaN was studied using cathodoluminescence (CL) technique. It was found that the nonuniform luminescence feature originated from pit-type defects. Two kinds of pit-type defects were distinguished by their morphology: one was hexagonal V-pit surrounded by 10-11 facets and the other was U-pit with 10-11 facets and the blunt bottom. The 10-11 facets of both pits with N-polarity show the strong CL emission due to the oxygen incorporation, while the matrix with Ga-polarity appeared dark in the CL image. The dim CL contrast was observed in the blunt bottom with the mixed polarities. The blunt bottom suggests the filling of pits during the growth, which may be the key to eliminate pit-type defects in free-standing GaN wafer.

本文言語English
ページ(範囲)25-30
ページ数6
ジャーナルJournal of Electron Microscopy
61
1
DOI
出版ステータスPublished - 2012 2月
外部発表はい

ASJC Scopus subject areas

  • 器械工学

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