Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope

N. Yamamoto, H. Itoh, V. Grillo, S. F. Chichibu, S. Keller, J. S. Speck, S. P. DenBaars, U. K. Mishra, S. Nakamura, G. Salviati

研究成果: Article

54 引用 (Scopus)

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A study was performed to characterize optical properties of dislocations in gallium nitride (GaN) epilayers. The techniques used were cathodoluminescence combined with transmission electron microscopy (TEM-CL). The results showed that the edge-type dislocation parallel to the c plane was more active than the edge-type threading dislocation, while the screw-type one was inactive.

元の言語English
ページ(範囲)4315-4319
ページ数5
ジャーナルJournal of Applied Physics
94
発行部数7
DOI
出版物ステータスPublished - 2003 10 1

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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    Yamamoto, N., Itoh, H., Grillo, V., Chichibu, S. F., Keller, S., Speck, J. S., DenBaars, S. P., Mishra, U. K., Nakamura, S., & Salviati, G. (2003). Cathodoluminescence characterization of dislocations in gallium nitride using a transmission electron microscope. Journal of Applied Physics, 94(7), 4315-4319. https://doi.org/10.1063/1.1598632