Using a W-La2O3 gated MOSFET structure, we report the effect. of substrate and gale injection of electrons on the breakdown and electrical degradation characteristics of the gate stack. Using the carrier separation measurement technique, we are able to identify the major contributor to leakage current under various stress conditions. By stressing n- and p-channel MOSFKTs with positive and negative gate voltages respectively, the degradation (Vth shift) after stress is obtained and compared to the polarity of the applied stress.
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