Carrier separation and Vth measurements of W-La2O3 gated MOSFET structures after electrical stress

Joel Molina, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Nobuyuki Sugir, Takeo Hattori, Hiroshi Iwai

研究成果: Article査読

1 被引用数 (Scopus)

抄録

Using a W-La2O3 gated MOSFET structure, we report the effect. of substrate and gale injection of electrons on the breakdown and electrical degradation characteristics of the gate stack. Using the carrier separation measurement technique, we are able to identify the major contributor to leakage current under various stress conditions. By stressing n- and p-channel MOSFKTs with positive and negative gate voltages respectively, the degradation (Vth shift) after stress is obtained and compared to the polarity of the applied stress.

本文言語English
ページ(範囲)185-191
ページ数7
ジャーナルIEICE Electronics Express
4
6
DOI
出版ステータスPublished - 2007 3月 25
外部発表はい

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

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