Carrier compensation mechanism of highly conductive anatase Ti 0.94Nb0.06O2 epitaxial thin films

Hiroyuki Nogawa, Taro Hitosugi, Hideyuki Kamisaka, Kouichi Yamashita, Akira Chikamatsu, Kouhei Yoshimatsu, Hiroshi Kumigashira, Masaharu Oshima, Syoichiro Nadao, Yutaka Furubayashi, Yasushi Hirose, Toshihiro Shimada, Tetsuya Hasegawa

    研究成果: Conference contribution

    2 被引用数 (Scopus)

    抄録

    We investigated electrical conduction of anatase Ti0.94Nb 0.06O2 (TNO) epitaxial thin films in relation to oxygen defects generated by post-annealing. Annealing of TNO in oxygen was found to cause dramatic decreases in ne. Resonant photoemission spectroscopy measurements revealed that a deep acceptor state just above the top of valence band evolves, synchronized with the decrease of ne. We proposed that the acceptor state originates from interstitial oxygen atoms combined with Nb dopants and compensates electron carriers.

    本文言語English
    ホスト出版物のタイトルSynthesis and Metrology of Nanoscale Oxides and Thin Films
    出版社Materials Research Society
    ページ41-45
    ページ数5
    ISBN(印刷版)9781605608556
    DOI
    出版ステータスPublished - 2008
    イベント2008 MRS Spring Meeting - San Francisco, CA, United States
    継続期間: 2008 3月 242008 3月 28

    出版物シリーズ

    名前Materials Research Society Symposium Proceedings
    1074
    ISSN(印刷版)0272-9172

    Other

    Other2008 MRS Spring Meeting
    国/地域United States
    CitySan Francisco, CA
    Period08/3/2408/3/28

    ASJC Scopus subject areas

    • 材料科学(全般)
    • 凝縮系物理学
    • 材料力学
    • 機械工学

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