Capacitive silicon resonator structure with movable electrodes to reduce capacitive gap widths based on electrostatic parallel plate actuation

研究成果: Conference contribution

3 被引用数 (Scopus)

抄録

This paper presents the design and fabrication of a capacitive silicon resonator with movable electrodes to obtain smaller capacitive gap widths, which results in smaller motional resistance and lower insertion loss. It also helps to increase the tuning frequency range for the compensation of temperature drift of the silicon resonator. The resonant frequency of the fabricated device with a length of 500 μm, width of 440 μm and thickness of 5 μm is observed at 9.65 MHz, and the quality factor is 49,000. Using electrostatically-drived movable electrode structure, it is shown that the motional resistance is reduced by 200 times, the output signal (insertion loss) is improved by 21 dB and the tuning characteristic of the frequency is 7 times larger than those of the structures without movable electrode structures.

本文言語English
ホスト出版物のタイトルMEMS 2014 - 27th IEEE International Conference on Micro Electro Mechanical Systems
出版社Institute of Electrical and Electronics Engineers Inc.
ページ1245-1248
ページ数4
ISBN(印刷版)9781479935086
DOI
出版ステータスPublished - 2014 1 1
イベント27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014 - San Francisco, CA, United States
継続期間: 2014 1 262014 1 30

出版物シリーズ

名前Proceedings of the IEEE International Conference on Micro Electro Mechanical Systems (MEMS)
ISSN(印刷版)1084-6999

Other

Other27th IEEE International Conference on Micro Electro Mechanical Systems, MEMS 2014
CountryUnited States
CitySan Francisco, CA
Period14/1/2614/1/30

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Mechanical Engineering
  • Electrical and Electronic Engineering

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