Capacitance-voltage characteristics of ZnOGaN heterostructures

D. C. Oh, T. Suzuki, J. J. Kim, H. Makino, T. Hanada, T. Yao, H. J. Ko

研究成果: Article査読

26 被引用数 (Scopus)

抄録

We have investigated the electrical properties of ZnOGaN heterostructures by capacitance-voltage (C-V) measurements. ZnOGaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnOGaN heterostructures exhibit a plateau region of 6.5 V in the C-V curves measured at 10 kHz and room temperature. Moreover, it is found that a large electron density is accumulated at the interface of ZnOGaN, where the concentration approaches ∼ 1018 cm-3. The distinct C-V characteristics are ascribed to large conduction-band discontinuity at the ZnOGaN heterointerface. It is suggested that the ZnOGaN heterostructure is a very promising material for the application to heterojunction transistors.

本文言語English
論文番号162104
ページ(範囲)1-3
ページ数3
ジャーナルApplied Physics Letters
87
16
DOI
出版ステータスPublished - 2005 10月 17

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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