Capacitance-voltage characteristics of ZnOGaN heterostructures

D. C. Oh; T. Suzuki; J. J. Kim; H. Makino; T. Hanada; T. Yao; H. J. Ko

doi:10.1063/1.2108107

Capacitance-voltage characteristics of ZnOGaN heterostructures

D. C. Oh, T. Suzuki, J. J. Kim, H. Makino, T. Hanada, T. Yao, H. J. Ko

金属材料研究所・材料設計研究部

研究成果: Article › 査読

26 被引用数 (Scopus)

抄録

We have investigated the electrical properties of ZnOGaN heterostructures by capacitance-voltage (C-V) measurements. ZnOGaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnOGaN heterostructures exhibit a plateau region of 6.5 V in the C-V curves measured at 10 kHz and room temperature. Moreover, it is found that a large electron density is accumulated at the interface of ZnOGaN, where the concentration approaches ∼ 1018 cm-3. The distinct C-V characteristics are ascribed to large conduction-band discontinuity at the ZnOGaN heterointerface. It is suggested that the ZnOGaN heterostructure is a very promising material for the application to heterojunction transistors.

本文言語	English
論文番号	162104
ページ（範囲）	1-3
ページ数	3
ジャーナル	Applied Physics Letters
巻	87
号	16
DOI	https://doi.org/10.1063/1.2108107
出版ステータス	Published - 2005 10月 17

ASJC Scopus subject areas

物理学および天文学（その他）

文献へのアクセス

10.1063/1.2108107

他のファイルとリンク

引用スタイル

@article{1def91ddc49c445abe349caebfc0424b,

title = "Capacitance-voltage characteristics of ZnOGaN heterostructures",

abstract = "We have investigated the electrical properties of ZnOGaN heterostructures by capacitance-voltage (C-V) measurements. ZnOGaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnOGaN heterostructures exhibit a plateau region of 6.5 V in the C-V curves measured at 10 kHz and room temperature. Moreover, it is found that a large electron density is accumulated at the interface of ZnOGaN, where the concentration approaches ∼ 1018 cm-3. The distinct C-V characteristics are ascribed to large conduction-band discontinuity at the ZnOGaN heterointerface. It is suggested that the ZnOGaN heterostructure is a very promising material for the application to heterojunction transistors.",

author = "Oh, {D. C.} and T. Suzuki and Kim, {J. J.} and H. Makino and T. Hanada and T. Yao and Ko, {H. J.}",

note = "Funding Information: The authors are grateful to Marubun Research Promotion Foundation and The Nippon Foundation for their support. The authors would also like to thank R. Buckmaster for his help on the manuscript. ",

year = "2005",

month = oct,

day = "17",

doi = "10.1063/1.2108107",

language = "English",

volume = "87",

pages = "1--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "16",

}

TY - JOUR

T1 - Capacitance-voltage characteristics of ZnOGaN heterostructures

AU - Oh, D. C.

AU - Suzuki, T.

AU - Kim, J. J.

AU - Makino, H.

AU - Hanada, T.

AU - Yao, T.

AU - Ko, H. J.

N1 - Funding Information: The authors are grateful to Marubun Research Promotion Foundation and The Nippon Foundation for their support. The authors would also like to thank R. Buckmaster for his help on the manuscript.

PY - 2005/10/17

Y1 - 2005/10/17

N2 - We have investigated the electrical properties of ZnOGaN heterostructures by capacitance-voltage (C-V) measurements. ZnOGaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnOGaN heterostructures exhibit a plateau region of 6.5 V in the C-V curves measured at 10 kHz and room temperature. Moreover, it is found that a large electron density is accumulated at the interface of ZnOGaN, where the concentration approaches ∼ 1018 cm-3. The distinct C-V characteristics are ascribed to large conduction-band discontinuity at the ZnOGaN heterointerface. It is suggested that the ZnOGaN heterostructure is a very promising material for the application to heterojunction transistors.

AB - We have investigated the electrical properties of ZnOGaN heterostructures by capacitance-voltage (C-V) measurements. ZnOGaN heterostructures are fabricated on Ga-polar GaN templates by plasma-assisted molecular-beam epitaxy. The ZnOGaN heterostructures exhibit a plateau region of 6.5 V in the C-V curves measured at 10 kHz and room temperature. Moreover, it is found that a large electron density is accumulated at the interface of ZnOGaN, where the concentration approaches ∼ 1018 cm-3. The distinct C-V characteristics are ascribed to large conduction-band discontinuity at the ZnOGaN heterointerface. It is suggested that the ZnOGaN heterostructure is a very promising material for the application to heterojunction transistors.

UR - http://www.scopus.com/inward/record.url?scp=28344441531&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28344441531&partnerID=8YFLogxK

U2 - 10.1063/1.2108107

DO - 10.1063/1.2108107

M3 - Article

AN - SCOPUS:28344441531

VL - 87

SP - 1

EP - 3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 16

M1 - 162104

ER -

Capacitance-voltage characteristics of ZnOGaN heterostructures

抄録

ASJC Scopus subject areas

文献へのアクセス

他のファイルとリンク

フィンガープリント

引用スタイル