Calculation of Electrical Properties of Novel Double-Barrier Metal Oxide Semiconductor Transistors

Tsuyoshi Hatano, Akihiro Nomura, Masayoshi Yoshida, Anri Nakajima, Kentaro Shibahara, Shin Yokoyama

研究成果: Conference article

抜粋

We propose novel ultrasmall metal-oxide-semiconductor (MOS) transistors with double-potential barriers. The structure is similar to the lightly doped drain (LDD) MOS transistors with upper and lower gates. The double-potential barriers, which are controlled by the upper gate voltage, are formed under the side wall spacers. It is confirmed by simulation that the tunneling current through the double-potential barriers is larger than the thermally excited current at 77 K. Then, the Coulomb blockade effects, i.e., the suppression of the tunneling current in the vicinity of the zero drain voltage and the Coulomb oscillation, are observable at 77 K.

元の言語English
ページ(範囲)399-402
ページ数4
ジャーナルJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
38
発行部数1 B
DOI
出版物ステータスPublished - 1999 1 1
イベントProceedings of the 1998 International Symposium on Formation, Physics and Device Application of Quantum Dot Structures, QDS-98 - Sapporo, Japan
継続期間: 1998 5 311998 6 4

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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