Bulk Single Crystal Growth of W Co-Doped Ce:GdGaAlO by Czochralski Method

M. Ueno, K. J. Kim, K. Kamada, V. Babin, M. Nikl, T. Nihei, M. Yoshino, A. Yamaji, S. Toyoda, H. Sato, Y. Yokota, S. Kurosawa, Y. Ohashi, V. V. Kochurikhin, A. Yoshikawa

研究成果: Article査読

抄録

Effects of the tungsten (W) ions co-doping on the crystal growth, optical and scintillation properties for the Czochralski (Cz) grown Ce:Gd3Ga3Al2O12(GGAG) single crystals were investigated. The W 0%, 0.1%, 0.3%, 1%, and 5% co-doped Ce 1%:GGAG single crystals with a diameter of 1 in and length of 60-80 mm were grown by the Cz method. The effective segregation coefficient of the W ions was found as 0.002, 0.001, and 0.005 for W 0.1%, 0.3%, and 1%, Ce:GGAG, respectively. The segregation of W ions in GGAG host, light yield, and scintillation decay of the W co-doped Ce:GGAG were evaluated. The light yield decreased as the concentration of W co-dopant increased and toward the tail of the crystal. Furthermore, the defect role and related charge trapping in the W co-doped crystals were monitored by the thermo-stimulated luminescence.

本文言語English
論文番号8963955
ページ(範囲)1045-1048
ページ数4
ジャーナルIEEE Transactions on Nuclear Science
67
6
DOI
出版ステータスPublished - 2020 6

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering

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