Bulk quantum Hall effect in η-Mo4O11

S. Hill, S. Uji, M. Takashita, C. Terakura, T. Terashima, H. Aoki, J. S. Brooks, Z. Fisk, J. Sarrao

研究成果: Article査読

58 被引用数 (Scopus)

抄録

We report the observation of a bulk quantum Hall effect in the quasi-two-dimensional conductor η-Mo4O11. The Hall resistance exhibits well-defined quantized plateaus, coincident with pronounced minima in the diagonal resistance. We propose a model involving (i) tiny quasi-two-dimensional electron and hole pockets, left over from an imperfectly nested charge-density wave, and (ii) the exchange of carriers between these mobile states and the localized charge-density-wave condensate. Together with a magnetic field, these factors result in well-separated bands of mobile states superimposed on a background continuum of localized states - the key ingredients for a quantum Hall effect. We also discuss the implications of these findings in the light of recent predictions concerning chiral metallic surface states in bulk quantum Hall systems.

本文言語English
ページ(範囲)10778-10783
ページ数6
ジャーナルPhysical Review B - Condensed Matter and Materials Physics
58
16
出版ステータスPublished - 1998 10月 15

ASJC Scopus subject areas

  • 凝縮系物理学

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