Broadband antireflection for III-V semiconductors by subwavelength surface grating structures

研究成果: Conference contribution

抄録

Recently, it is demonstrated that the subwavelength grating (SWG), which is the surface-relief grating with the period smaller than the wavelength of light, behaves as an antireflection surface. In particular, a tapered SWG suppresses reflection over a wide spectral bandwidth. The SWS is more stable than the multulayered thin film, since it is fabricated from a single material. In this study, we demonstrate broadband antirefraction properties of III-V materials (GaSb) by using SWG. The surface nano-structures with 200-350nm periods are fabricated by means of electron beam lithography and fast atom beam (FAB) etching. The reflectivity of the sample is strongly suppressed from the visible to near IR region. The experimental data is compared with numerical simulations using the rigorous coupled analysis (RCWA).

本文言語English
ホスト出版物のタイトルProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
編集者K. Kurokawa, L.L. Kazmerski, B. McNeils, M. Yamaguchi, C. Wronski
ページ2710-2713
ページ数4
出版ステータスPublished - 2003 12 1
イベントProceddings of the 3rd World Conference on Photovoltaic Energy Conversion - Osaka, Japan
継続期間: 2003 5 112003 5 18

出版物シリーズ

名前Proceedings of the 3rd World Conference on Photovoltaic Energy Conversion
C

Other

OtherProceddings of the 3rd World Conference on Photovoltaic Energy Conversion
CountryJapan
CityOsaka
Period03/5/1103/5/18

ASJC Scopus subject areas

  • Engineering(all)

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