Bridge type josephson junctions in mo-cvd thin films

Satoru Noge, Tsutomu Yamashita, Zhen Wang, Toshiaki Matsui, Hideyuki Kurosawa, Hisanori Yamane, Toshio Hirai

研究成果: Article査読

20 被引用数 (Scopus)

抄録

Using Y1Ba2Cu3O7-xthin films, bridge type Josephson junctions are fabricated. Thin films of Y1Ba2Cu3O7-xon (100) MgO substrates are deposited by the MO-CVD method. These films exhibit zero resistance at 86 K, and a critical current density of 104to 105A/cm2at 77 K. The effect of radio frequency irradiations to the bridge are investigated. Sharp microwave-induced steps are observed up to 800 μV at 77 K for X band irradiation. Clear Shapiro steps are also observed at the millimeter (101 GHz) and submillimeter frequency (303 GHz). The results demonstrate that the thin film bridges made by MO-CVD show an ideal ac Josephson effect.

本文言語English
ページ(範囲)L1581-L1584
ジャーナルJapanese journal of applied physics
28
9 A
DOI
出版ステータスPublished - 1989 9月 1

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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