Boxcar averaging based scanning nonlinear dielectric microscopy and its application to carrier distribution Imaging on 2D Semiconductors

Kohei Yamasue; Yasuo Cho

doi:10.1109/IIRW47491.2019.8989887

Boxcar averaging based scanning nonlinear dielectric microscopy and its application to carrier distribution Imaging on 2D Semiconductors

Kohei Yamasue, Yasuo Cho

電気通信研究所・情報デバイス研究部門

研究成果: Conference contribution

2 被引用数 (Scopus)

抄録

Intermittent contact scanning nonlinear dielectric microscopy (IC-SNDM) has recently been applied to the nanoscale carrier or active dopant distribution imaging on two-dimensional semiconductors. However, IC-SNDM may suffer from a lower signal-To-noise (S/N) ratio than conventional contact mode SNDM due to the unoptimized detection of the signal only intermittently occurring. Here we show that S/N ratio can be much improved by applying the idea of boxcar averaging, which makes anomalous carrier doping on atomically-Thin MoS₂ clearly visible by IC-SNDM.

本文言語	English
ホスト出版物のタイトル	2019 IEEE International Integrated Reliability Workshop, IIRW 2019
出版社	Institute of Electrical and Electronics Engineers Inc.
ISBN（電子版）	9781728122038
DOI	https://doi.org/10.1109/IIRW47491.2019.8989887
出版ステータス	Published - 2019 10月
イベント	2019 IEEE International Integrated Reliability Workshop, IIRW 2019 - Fallen Leaf Lake, United States 継続期間: 2019 10月 13 → 2019 10月 17

出版物シリーズ

名前	IEEE International Integrated Reliability Workshop Final Report
巻	2019-October

Conference

Conference	2019 IEEE International Integrated Reliability Workshop, IIRW 2019
国/地域	United States
City	Fallen Leaf Lake
Period	19/10/13 → 19/10/17

ASJC Scopus subject areas

電子工学および電気工学
安全性、リスク、信頼性、品質管理
電子材料、光学材料、および磁性材料

文献へのアクセス

10.1109/IIRW47491.2019.8989887

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引用スタイル

Yamasue, K., & Cho, Y. (2019). Boxcar averaging based scanning nonlinear dielectric microscopy and its application to carrier distribution Imaging on 2D Semiconductors. In 2019 IEEE International Integrated Reliability Workshop, IIRW 2019 [8989887] (IEEE International Integrated Reliability Workshop Final Report; Vol. 2019-October). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IIRW47491.2019.8989887

Boxcar averaging based scanning nonlinear dielectric microscopy and its application to carrier distribution Imaging on 2D Semiconductors. / Yamasue, Kohei; Cho, Yasuo.

2019 IEEE International Integrated Reliability Workshop, IIRW 2019. Institute of Electrical and Electronics Engineers Inc., 2019. 8989887 (IEEE International Integrated Reliability Workshop Final Report; Vol. 2019-October).

研究成果: Conference contribution

Yamasue, K & Cho, Y 2019, Boxcar averaging based scanning nonlinear dielectric microscopy and its application to carrier distribution Imaging on 2D Semiconductors. in 2019 IEEE International Integrated Reliability Workshop, IIRW 2019., 8989887, IEEE International Integrated Reliability Workshop Final Report, vol. 2019-October, Institute of Electrical and Electronics Engineers Inc., 2019 IEEE International Integrated Reliability Workshop, IIRW 2019, Fallen Leaf Lake, United States, 19/10/13. https://doi.org/10.1109/IIRW47491.2019.8989887

Yamasue K, Cho Y. Boxcar averaging based scanning nonlinear dielectric microscopy and its application to carrier distribution Imaging on 2D Semiconductors. In 2019 IEEE International Integrated Reliability Workshop, IIRW 2019. Institute of Electrical and Electronics Engineers Inc. 2019. 8989887. (IEEE International Integrated Reliability Workshop Final Report). https://doi.org/10.1109/IIRW47491.2019.8989887

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abstract = "Intermittent contact scanning nonlinear dielectric microscopy (IC-SNDM) has recently been applied to the nanoscale carrier or active dopant distribution imaging on two-dimensional semiconductors. However, IC-SNDM may suffer from a lower signal-To-noise (S/N) ratio than conventional contact mode SNDM due to the unoptimized detection of the signal only intermittently occurring. Here we show that S/N ratio can be much improved by applying the idea of boxcar averaging, which makes anomalous carrier doping on atomically-Thin MoS2 clearly visible by IC-SNDM.",

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note = "Funding Information: We would like to thank Toshihiko Iwai, Tohoku University, for providing support in the development of high-sensitivity probes. This work is partly supported by a Grant-in-Aid for Scientific Research (16H02330) from the Japan Society for the Promotion of Science. Publisher Copyright: {\textcopyright} 2019 IEEE.; 2019 IEEE International Integrated Reliability Workshop, IIRW 2019 ; Conference date: 13-10-2019 Through 17-10-2019",

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AB - Intermittent contact scanning nonlinear dielectric microscopy (IC-SNDM) has recently been applied to the nanoscale carrier or active dopant distribution imaging on two-dimensional semiconductors. However, IC-SNDM may suffer from a lower signal-To-noise (S/N) ratio than conventional contact mode SNDM due to the unoptimized detection of the signal only intermittently occurring. Here we show that S/N ratio can be much improved by applying the idea of boxcar averaging, which makes anomalous carrier doping on atomically-Thin MoS2 clearly visible by IC-SNDM.

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