Incident energy, fluence of helium ion and temperature for blister formation in rutile TiO2(1 0 0) films were investigated. Epitaxial rutile TiO2(1 0 0) films were grown on α-Al2O3(0 0 0 1) substrates by pulsed laser deposition. The films were irradiated at room temperature and 95 K with 4 keV helium ions up to fluence range from 1.0 × 1016 to 2.3 × 1017 ions/cm2. The surface morphology of TiO2 films was observed by scanning electron microscope and atomic force microscope. Rutherford backscattering spectroscopy with channeling was used to determine the depth profile of radiation-induced damage. In the case of room temperature irradiation with fluences higher than 2 × 1016 ions/cm2, helium blisters with 100-200 nm sizes in TiO2 films were observed. Furthermore, helium irradiation at 95 K resulted in smaller size blisters (∼50 nm). It is suggested that the size of blisters in TiO2(1 0 0) films is strongly affected by the temperature during the helium irradiation. The photo-induced superhydrophilicity of TiO2 films was improved by high fluence helium irradiation, which caused blister growth.
|ジャーナル||Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms|
|号||1-2 SPEC. ISS.|
|出版ステータス||Published - 2006 8 1|
ASJC Scopus subject areas
- Nuclear and High Energy Physics