Bipolar device and circuit technologies for future wireless communications

K. Washio, N. Shiramizu, M. Miura, T. Nakamura, K. Oda, T. Masuda

研究成果: Conference contribution

抄録

SiGe HBTs and their circuit technologies are suitable for future wireless communications. To achieve low 1/f-noise characteristics in RF applications, a SiGe HBT with a raised-emitter structure, fabricated by epitaxial growth of phosphorous-doped Si layers, was developed. Aimed at ultra-low power consumption in a wide range of microwave applications, a SiGe HBT fabricated by well-controlled SiGe/Si continuous epitaxial growth was developed. To improve the design process for Si-based RF-ICs, equivalent circuits for transmission lines under the slow-wave effect and for inductors under the peripheral ground effect were also demonstrated. Moreover, MMICs operating in the quasi-millimeter-wave region, namely, a 24-GHz LNA, a 27-GHz VCO, and a 24-GHz mixer were developed. In regards to these MMICs, new circuit technologies, namely, inductive biasing, merged transformer matching, and pseudo-stacked configuration, were developed.

本文言語English
ホスト出版物のタイトル2009 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT
ページ261-272
ページ数12
1
DOI
出版ステータスPublished - 2009 12 1
外部発表はい
イベント2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II - Xian, China
継続期間: 2009 7 52009 7 10

出版物シリーズ

名前ECS Transactions
番号1
22
ISSN(印刷版)1938-5862
ISSN(電子版)1938-6737

Other

Other2nd International Conference on Semiconductor Technology for Ultra Large Integrated Circuits and Thin Film Transistors, ULSIC vs. TFT II
国/地域China
CityXian
Period09/7/509/7/10

ASJC Scopus subject areas

  • 工学(全般)

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