Bilayer-by-bilayer etching of 6H-GaN(0 0 0 1) with Cl

S. Kuwano, Q. Z. Xue, Y. Asano, Y. Fujikawa, Q. K. Xue, Koji Nakayama, T. Nagao, T. Sakurai

研究成果: Article査読

7 被引用数 (Scopus)

抄録

Etching of Ga-polar GaN(0 0 0 1) surface with Cl has been studied using scanning tunneling microscopy. Three different processes in the thermally activated Cl reaction, i.e., the removal of Ga-fluid, the formation of alternative zigzag and smooth steps, and the initiation of triangle pits on the terrace that take place at different temperatures, are identified. The atom removal is found to proceed via a bilayer-by-bilayer mode on the GaN surface, and the underlying mechanism is discussed in terms of the surface atomic structure.

本文言語English
ジャーナルSurface Science
561
2-3
DOI
出版ステータスPublished - 2004 7月 20

ASJC Scopus subject areas

  • 凝縮系物理学
  • 表面および界面
  • 表面、皮膜および薄膜
  • 材料化学

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