Biexciton luminescence from individual isoelectronic traps in nitrogen δ-doped GaAs

Kengo Takamiya; Toshiyuki Fukushima; Shuhei Yagi; Yasuto Hijikata; Toshimitsu Mochizuki; Masahiro Yoshita; Hidefumi Akiyama; Shigeyuki Kuboya; Kentaro Onabe; Ryuji Katayama; Hiroyuki Yaguchi

doi:10.1143/APEX.5.111201

Biexciton luminescence from individual isoelectronic traps in nitrogen δ-doped GaAs

Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi

金属材料研究所・材料設計研究部

研究成果: Article › 査読

8 被引用数 (Scopus)

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We report on the observation of biexciton luminescence from single isoelectronic traps formed by nitrogen-nitrogen pairs in nitrogen δ-doped GaAs. The biexciton luminescence intensity showed a quadratic dependence on the excitation power while the exciton luminescence intensity increased linearly with increasing excitation power. The biexciton binding energy was found to be 8 meV, which is considerably larger than that reported for single InAs quantum dots in GaAs. We have also found that both the biexciton and exciton emission lines show completely unpolarized and no fine-structure splitting. This is suitable for the application to polarization-entangled photon pairs.

本文言語	English
論文番号	111201
ジャーナル	Applied Physics Express
巻	5
号	11
DOI	https://doi.org/10.1143/APEX.5.111201
出版ステータス	Published - 2012 11月

ASJC Scopus subject areas

工学（全般）
物理学および天文学（全般）

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10.1143/APEX.5.111201

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title = "Biexciton luminescence from individual isoelectronic traps in nitrogen δ-doped GaAs",

abstract = "We report on the observation of biexciton luminescence from single isoelectronic traps formed by nitrogen-nitrogen pairs in nitrogen δ-doped GaAs. The biexciton luminescence intensity showed a quadratic dependence on the excitation power while the exciton luminescence intensity increased linearly with increasing excitation power. The biexciton binding energy was found to be 8 meV, which is considerably larger than that reported for single InAs quantum dots in GaAs. We have also found that both the biexciton and exciton emission lines show completely unpolarized and no fine-structure splitting. This is suitable for the application to polarization-entangled photon pairs.",

author = "Kengo Takamiya and Toshiyuki Fukushima and Shuhei Yagi and Yasuto Hijikata and Toshimitsu Mochizuki and Masahiro Yoshita and Hidefumi Akiyama and Shigeyuki Kuboya and Kentaro Onabe and Ryuji Katayama and Hiroyuki Yaguchi",

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doi = "10.1143/APEX.5.111201",

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T1 - Biexciton luminescence from individual isoelectronic traps in nitrogen δ-doped GaAs

AU - Takamiya, Kengo

AU - Fukushima, Toshiyuki

AU - Yagi, Shuhei

AU - Hijikata, Yasuto

AU - Mochizuki, Toshimitsu

AU - Yoshita, Masahiro

AU - Akiyama, Hidefumi

AU - Kuboya, Shigeyuki

AU - Onabe, Kentaro

AU - Katayama, Ryuji

AU - Yaguchi, Hiroyuki

PY - 2012/11

Y1 - 2012/11

N2 - We report on the observation of biexciton luminescence from single isoelectronic traps formed by nitrogen-nitrogen pairs in nitrogen δ-doped GaAs. The biexciton luminescence intensity showed a quadratic dependence on the excitation power while the exciton luminescence intensity increased linearly with increasing excitation power. The biexciton binding energy was found to be 8 meV, which is considerably larger than that reported for single InAs quantum dots in GaAs. We have also found that both the biexciton and exciton emission lines show completely unpolarized and no fine-structure splitting. This is suitable for the application to polarization-entangled photon pairs.

AB - We report on the observation of biexciton luminescence from single isoelectronic traps formed by nitrogen-nitrogen pairs in nitrogen δ-doped GaAs. The biexciton luminescence intensity showed a quadratic dependence on the excitation power while the exciton luminescence intensity increased linearly with increasing excitation power. The biexciton binding energy was found to be 8 meV, which is considerably larger than that reported for single InAs quantum dots in GaAs. We have also found that both the biexciton and exciton emission lines show completely unpolarized and no fine-structure splitting. This is suitable for the application to polarization-entangled photon pairs.

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Biexciton luminescence from individual isoelectronic traps in nitrogen δ-doped GaAs

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