Biexciton luminescence from individual isoelectronic traps in nitrogen δ-doped GaAs

Kengo Takamiya, Toshiyuki Fukushima, Shuhei Yagi, Yasuto Hijikata, Toshimitsu Mochizuki, Masahiro Yoshita, Hidefumi Akiyama, Shigeyuki Kuboya, Kentaro Onabe, Ryuji Katayama, Hiroyuki Yaguchi

研究成果: Article査読

8 被引用数 (Scopus)

抄録

We report on the observation of biexciton luminescence from single isoelectronic traps formed by nitrogen-nitrogen pairs in nitrogen δ-doped GaAs. The biexciton luminescence intensity showed a quadratic dependence on the excitation power while the exciton luminescence intensity increased linearly with increasing excitation power. The biexciton binding energy was found to be 8 meV, which is considerably larger than that reported for single InAs quantum dots in GaAs. We have also found that both the biexciton and exciton emission lines show completely unpolarized and no fine-structure splitting. This is suitable for the application to polarization-entangled photon pairs.

本文言語English
論文番号111201
ジャーナルApplied Physics Express
5
11
DOI
出版ステータスPublished - 2012 11月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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