Bidirectional electric-induced conductance based on gete/sb2 te3 interfacial phase change memory for neuro-inspired computing

Shin Young Kang, Soo Min Jin, Ju Young Lee, Dae Seong Woo, Tae Hun Shim, In Ho Nam, Jea Gun Park, Yuji Sutou, Yun Heub Song

研究成果: Article査読


Corresponding to the principles of biological synapses, an essential prerequisite for hardware neural networks using electronics devices is the continuous regulation of conductance. We implemented artificial synaptic characteristics in a (GeTe/Sb2 Te3)16 iPCM with a superlattice structure under optimized identical pulse trains. By atomically controlling the Ge switch in the phase transition that appears in the GeTe/Sb2 Te3 superlattice structure, multiple conductance states were implemented by applying the appropriate electrical pulses. Furthermore, we found that the bidirectional switching behavior of a (GeTe/Sb2 Te3)16 iPCM can achieve a desired resistance level by using the pulse width. Therefore, we fabricated a Ge2 Sb2 Te5 PCM and designed a pulse scheme, which was based on the phase transition mechanism, to compare to the (GeTe/Sb2 Te3)16 iPCM. We also designed an identical pulse scheme that implements both linear and symmetrical LTP and LTD, based on the iPCM mechanism. As a result, the (GeTe/Sb2 Te3)16 iPCM showed relatively excellent synaptic characteristics by implementing a gradual conductance modulation, a nonlinearity value of 0.32, and 40 LTP/LTD conductance states by using identical pulse trains. Our results demonstrate the general applicability of the artificial synaptic device for potential use in neuro-inspired computing and next-generation, non-volatile memory.

ジャーナルElectronics (Switzerland)
出版ステータスPublished - 2021 11 1

ASJC Scopus subject areas

  • 制御およびシステム工学
  • 信号処理
  • ハードウェアとアーキテクチャ
  • コンピュータ ネットワークおよび通信
  • 電子工学および電気工学


「Bidirectional electric-induced conductance based on gete/sb<sub>2</sub> te<sub>3</sub> interfacial phase change memory for neuro-inspired computing」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。