抄録
Corresponding to the principles of biological synapses, an essential prerequisite for hardware neural networks using electronics devices is the continuous regulation of conductance. We implemented artificial synaptic characteristics in a (GeTe/Sb2 Te3)16 iPCM with a superlattice structure under optimized identical pulse trains. By atomically controlling the Ge switch in the phase transition that appears in the GeTe/Sb2 Te3 superlattice structure, multiple conductance states were implemented by applying the appropriate electrical pulses. Furthermore, we found that the bidirectional switching behavior of a (GeTe/Sb2 Te3)16 iPCM can achieve a desired resistance level by using the pulse width. Therefore, we fabricated a Ge2 Sb2 Te5 PCM and designed a pulse scheme, which was based on the phase transition mechanism, to compare to the (GeTe/Sb2 Te3)16 iPCM. We also designed an identical pulse scheme that implements both linear and symmetrical LTP and LTD, based on the iPCM mechanism. As a result, the (GeTe/Sb2 Te3)16 iPCM showed relatively excellent synaptic characteristics by implementing a gradual conductance modulation, a nonlinearity value of 0.32, and 40 LTP/LTD conductance states by using identical pulse trains. Our results demonstrate the general applicability of the artificial synaptic device for potential use in neuro-inspired computing and next-generation, non-volatile memory.
本文言語 | English |
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論文番号 | 2692 |
ジャーナル | Electronics (Switzerland) |
巻 | 10 |
号 | 21 |
DOI | |
出版ステータス | Published - 2021 11月 1 |
ASJC Scopus subject areas
- 制御およびシステム工学
- 信号処理
- ハードウェアとアーキテクチャ
- コンピュータ ネットワークおよび通信
- 電子工学および電気工学