Bias-voltage application in hard x-ray photoelectron spectroscopy for characterization of advanced materials

Yoshiyuki Yamashita, Kenji Ohmori, Shigenori Ueda, Hideki Yoshikawa, Toyohiro Chikyow, Keisuke Kobayashi

研究成果: Article査読

17 被引用数 (Scopus)

抄録

We employed bias-voltage-application in hard x-ray photoelectron spectroscopy (BA-HXPES) to detect electronic states of materials in operating devices. To demonstrate the versatility of this method, we used a metal/SiO 2/Si(100) structure as an ideal platform and found that electronic states at the SiO2/Si(100) interface were changed depending on the bias-application to the structure. By analyzing the change as a function of bias-voltage, the interface electronic states in the whole Si gap have been directly obtained in which these states cannot be detected without the bias-application. BA-HXPES is a new method to characterize electronic states for advanced materials under device operation.

本文言語English
ページ(範囲)81-83
ページ数3
ジャーナルe-Journal of Surface Science and Nanotechnology
8
DOI
出版ステータスPublished - 2010 2 27

ASJC Scopus subject areas

  • バイオテクノロジー
  • バイオエンジニアリング
  • 凝縮系物理学
  • 材料力学
  • 表面および界面
  • 表面、皮膜および薄膜

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