Bias stress instability in pentacene thin film transistors: Contact resistance change and channel threshold voltage shift

S. D. Wang, T. Minari, T. Miyadera, Y. Aoyagi, K. Tsukagoshi

研究成果: Article査読

97 被引用数 (Scopus)

抄録

Bias stress instability in top-contact pentacene thin film transistors was observed to be correlated not only to the channel but also to the metal/organic contact. The drain current decay under bias stress results from the combination of the contact resistance change and the threshold voltage shift in the channel. The contact resistance change is contact-metal dependent, though the corresponding channel threshold voltage shifts are similar. The results suggest that the time-dependent charge trapping into the deep trap states in both the contact and channel regions is responsible for the bias stress effect in organic thin film transistors.

本文言語English
論文番号063305
ジャーナルApplied Physics Letters
92
6
DOI
出版ステータスPublished - 2008
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(その他)

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