Bias dependence of STM profiles around the quantum point contact

K. Nagaoka, S. Yaginuma, T. Nagao, T. Nakayama

    研究成果: Article査読

    抄録

    We report atomic-scale quantum point contacts (QPCs) formed parallel to the substrate surface. The QPCs are formed in domain boundary of a multidomain Bi{0 1 2} film on a Si(1 1 1)-β√3 × √3-Bi substrate, thus direct observation of the QPCs with a scanning tunneling microscope (STM) is possible. Bias dependence of STM images indicates that a localized electronic state exists near the Fermi level around the QPC. Presumably, the localized state originates from the electronic confinement in a cylindrical potential well along the conduction channel through the QPC.

    本文言語English
    ページ(範囲)4319-4322
    ページ数4
    ジャーナルSurface Science
    600
    18
    DOI
    出版ステータスPublished - 2006 9月 15

    ASJC Scopus subject areas

    • 凝縮系物理学
    • 表面および界面
    • 表面、皮膜および薄膜
    • 材料化学

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