Bias dependence of STM profiles around the quantum point contact

K. Nagaoka; S. Yaginuma; T. Nagao; T. Nakayama

doi:10.1016/j.susc.2006.01.160

Bias dependence of STM profiles around the quantum point contact

K. Nagaoka, S. Yaginuma, T. Nagao, T. Nakayama

研究成果: Article › 査読

抄録

We report atomic-scale quantum point contacts (QPCs) formed parallel to the substrate surface. The QPCs are formed in domain boundary of a multidomain Bi{0 1 2} film on a Si(1 1 1)-β√3 × √3-Bi substrate, thus direct observation of the QPCs with a scanning tunneling microscope (STM) is possible. Bias dependence of STM images indicates that a localized electronic state exists near the Fermi level around the QPC. Presumably, the localized state originates from the electronic confinement in a cylindrical potential well along the conduction channel through the QPC.

本文言語	English
ページ（範囲）	4319-4322
ページ数	4
ジャーナル	Surface Science
巻	600
号	18
DOI	https://doi.org/10.1016/j.susc.2006.01.160
出版ステータス	Published - 2006 9月 15

ASJC Scopus subject areas

凝縮系物理学
表面および界面
表面、皮膜および薄膜
材料化学

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10.1016/j.susc.2006.01.160

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title = "Bias dependence of STM profiles around the quantum point contact",

abstract = "We report atomic-scale quantum point contacts (QPCs) formed parallel to the substrate surface. The QPCs are formed in domain boundary of a multidomain Bi{0 1 2} film on a Si(1 1 1)-β√3 × √3-Bi substrate, thus direct observation of the QPCs with a scanning tunneling microscope (STM) is possible. Bias dependence of STM images indicates that a localized electronic state exists near the Fermi level around the QPC. Presumably, the localized state originates from the electronic confinement in a cylindrical potential well along the conduction channel through the QPC.",

keywords = "Bismuth (Bi), Nanostructures, Quantum confinement, Reflection high-energy electron diffraction (RHEED), Scanning tunneling microscopy (STM), Silicon (Si), Thin film structure",

author = "K. Nagaoka and S. Yaginuma and T. Nagao and T. Nakayama",

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T1 - Bias dependence of STM profiles around the quantum point contact

AU - Nagaoka, K.

AU - Yaginuma, S.

AU - Nagao, T.

AU - Nakayama, T.

PY - 2006/9/15

Y1 - 2006/9/15

N2 - We report atomic-scale quantum point contacts (QPCs) formed parallel to the substrate surface. The QPCs are formed in domain boundary of a multidomain Bi{0 1 2} film on a Si(1 1 1)-β√3 × √3-Bi substrate, thus direct observation of the QPCs with a scanning tunneling microscope (STM) is possible. Bias dependence of STM images indicates that a localized electronic state exists near the Fermi level around the QPC. Presumably, the localized state originates from the electronic confinement in a cylindrical potential well along the conduction channel through the QPC.

AB - We report atomic-scale quantum point contacts (QPCs) formed parallel to the substrate surface. The QPCs are formed in domain boundary of a multidomain Bi{0 1 2} film on a Si(1 1 1)-β√3 × √3-Bi substrate, thus direct observation of the QPCs with a scanning tunneling microscope (STM) is possible. Bias dependence of STM images indicates that a localized electronic state exists near the Fermi level around the QPC. Presumably, the localized state originates from the electronic confinement in a cylindrical potential well along the conduction channel through the QPC.

KW - Bismuth (Bi)

KW - Nanostructures

KW - Quantum confinement

KW - Reflection high-energy electron diffraction (RHEED)

KW - Scanning tunneling microscopy (STM)

KW - Silicon (Si)

KW - Thin film structure

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DO - 10.1016/j.susc.2006.01.160

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JO - Surface Science

JF - Surface Science

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Bias dependence of STM profiles around the quantum point contact

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