Bias dependence of spin injection/transport properties of a perpendicularly magnetized FePt/MgO/GaAs structure

Rento Ohsugi, Yoji Kunihashi, Haruki Sanada, Makoto Kohda, Hideki Gotoh, Tetsuomi Sogawa, Junsaku Nitta

研究成果: Article査読

2 被引用数 (Scopus)

抄録

We demonstrate injection and transport of perpendicularly spin-polarized electrons in an FePt/MgO/n-GaAs structure. Spin-polarized electrons were injected from a perpendicularly magnetized FePt layer into an n-GaAs layer through a MgO barrier and detected by spatially resolved Kerr rotation microscopy. By measuring the Hanle effect, we reveal that the injected/extracted spin polarizations drastically vary with bias voltages. A spin lifetime of 3.5 ns is obtained that is consistent with the result from pump-probe measurements. This direct observation of perpendicularly polarized spin injection and lateral transport is one step toward realizing future spintronic devices.

本文言語English
論文番号43002
ジャーナルApplied Physics Express
9
4
DOI
出版ステータスPublished - 2016 4月

ASJC Scopus subject areas

  • 工学(全般)
  • 物理学および天文学(全般)

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