Behaviors of neutral and charged silicon self-interstitials during transient enhanced diffusion in silicon investigated by isotope superlattices

Yasuo Shimizu, Masashi Uematsu, Kohei M. Itoh, Akio Takano, Kentarou Sawano, Yasuhiro Shiraki

研究成果: Article査読

10 被引用数 (Scopus)

抄録

We investigated the contributions of neutral and charged silicon self-interstitials to self- and boron diffusion during transient enhanced diffusion in silicon. We simultaneously observed self- and boron diffusion in silicon using S natSi/28 i isotope superlattices. A calculation based on diffusion equations involving {311} defects and boron-interstitial cluster models was employed to reproduce the diffusion profiles in silicon-implanted (intrinsic) and boron-implanted (extrinsic) silicon isotope superlattices, followed by annealing. To investigate the diffusion processes, the time evolution of the silicon self-interstitial profiles during the transient diffusion was simulated. The results directly demonstrate that excess neutral self-interstitials dominantly enhance the self-diffusion during the transient process in the intrinsic conditions, while doubly positively charged self-interstitials dominate the self-diffusion in the extrinsic conditions.

本文言語English
論文番号013504
ジャーナルJournal of Applied Physics
105
1
DOI
出版ステータスPublished - 2009
外部発表はい

ASJC Scopus subject areas

  • 物理学および天文学(全般)

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