The behavior of edge dislocations propagating along the growth direction, generated near the interface between the seed and the grown crystal, in Czochralski Si crystal growth is investigated. When a heavily B-doped Si crystal was grown using an undoped Si seed, edge dislocations were generated near the interface and propagated into the grown crystal orthogonally to the growth interface, but they did not multiply. However, when an undoped Si crystal was grown using a heavily B-doped Si seed, no edge dislocations propagating along the growth direction were generated in the crystal. It was found that the edge dislocations in the former case originated from the interaction of two misfit dislocations, propagating linearly in the heavily B-doped Si crystal and coming from the interface. The formation of the edge dislocations propagating along the growth direction in a Si crystal depends on both the difference in lattice constant between the seed and the grown crystal and the B concentration in the grown crystal.
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