Behavior of N atoms in atomic-order nitrided Si 0.5 Ge 0.5 (1 0 0)

Nao Akiyama, Masao Sakuraba, Bernd Tillack, Junichi Murota

研究成果: Article

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Behavior of N atoms in atomic-order nitrided Si 0.5 Ge 0.5 (1 0 0) by heat treatment in Ar at 600 °C was investigated by X-ray photoelectron spectroscopy (XPS). For thermal nitridation by NH 3 at 400 °C, nitridation of surface Si atoms tends to proceed preferentially over nitridation of surface Ge atoms. It is also clear that, with the heat treatment, nitridation of Si atoms proceeds by transfer of N atoms from Ge atoms. Angle-resolved XPS results show that Ge fraction beneath the surface nitrided layer increases significantly at 600 °C compared to the initial surface. These results indicate that preferential nitridation of Si atoms at surface over Ge atoms induces Ge segregation beneath the surface nitrided layer at higher temperatures above 400 °C.

元の言語English
ページ(範囲)6021-6024
ページ数4
ジャーナルApplied Surface Science
254
発行部数19
DOI
出版物ステータスPublished - 2008 7 30

ASJC Scopus subject areas

  • Chemistry(all)
  • Condensed Matter Physics
  • Physics and Astronomy(all)
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

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