Behavior of N atoms after thermal nitridation of Si1 - XGe x surface

Tomoyuki Kawashima, Masao Sakuraba, Bernd Tillack, Junichi Murota

研究成果: Article査読

4 被引用数 (Scopus)

抄録

Behavior of N atoms after thermal nitridation of Si1 - xGe x (100) surface in NH3 atmosphere at 400°C was investigated. X-ray photoelectron spectroscopy (XPS) results show that N atomic amount after nitridation tends to increase with increasing Ge fraction, and amount of N atoms bonded with Ge atoms decreases by heat treatment in H 2 at 400°C. For nitrided Si0.3Ge0.7(100), the bonding between N and Si atoms forms Si3N4 structure whose amount is larger than that for nitrided Si(100). Angle-resolved XPS measurements show that there are N atoms not only at the outermost surface but also beneath surface especially in a deeper region around a few atomic layers for the nitrided Si(100), Si0.3Ge0.7(100) and Ge(100). From these results, it is suggested that penetration of N atoms through around a few atomic layers for Si, Si0.3Ge0.7 and Ge occurs during nitridation, and the N atoms for the nitrided Si0.3Ge 0.7(100) dominantly form a Si3N4 structure which stably remains even during heat treatment in H2 at 400°C.

本文言語English
ページ(範囲)3392-3396
ページ数5
ジャーナルThin Solid Films
520
8
DOI
出版ステータスPublished - 2012 2 1

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 表面および界面
  • 表面、皮膜および薄膜
  • 金属および合金
  • 材料化学

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