Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth

Toshinori Taishi, Keigo Hoshikawa, Yutaka Ohno, Ichiro Yonenaga

研究成果: Article査読

2 被引用数 (Scopus)

抄録

Generation of dislocations due to thermal shock in Czochralski (CZ) Si crystal growth under different dipping temperature is investigated. Generation of dislocations due to thermal shock could be suppressed by using a heavily B-doped CZ-Si seed, and the ability for such suppression increased with increasing B concentration in the seed. However, dislocations were generated when the temperature difference before and after the dipping of which a seed was sustained became large. Critical shear stress of B-doped Si crystal with a B concentration of 3×1018 cm-3 at the melting point of Si was estimated to be around 4 MPa.

本文言語English
ページ(範囲)4612-4615
ページ数4
ジャーナルPhysica B: Condensed Matter
404
23-24
DOI
出版ステータスPublished - 2009 12 15

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 凝縮系物理学
  • 電子工学および電気工学

フィンガープリント

「Behavior of dislocations due to thermal shock and critical shear stress of Si in Czochralski crystal growth」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル