We have demonstrated synthesis of BaTi(Hf0.5Zr0.5)O3 (BTHZ) thin films using the fourth harmonic wave of a pulsed YAG (FHG-YAG) laser, for the first time. The BTHZ thin films with a preferred orientation in the c-axis are successfully synthesized and can be carried out under an oxygen gas pressure of 3 Pa at 800°C. Crystallinity of the deposited films seems to depend on the distance between atoms of each element.
|ジャーナル||Journal of the Korean Physical Society|
|出版ステータス||Published - 1998 12月 1|
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