Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation

Niraj Man Shrestha, Chao Hsuan Chen, Zuo Min Tsai, Yiming Li, Jenn Hawn Tarng, Seiji Samukawa

研究成果: Conference contribution

抄録

Electrical characteristics of lattice matched AlInGaN/GaN high electron mobility transistors with different barrier engineering was studied theoretically by solving drift diffusion equation. The results of the study thoroughly disclose the mitigation of induced polarization charge on lowering Al and In content in barrier resulting in a positive shift of threshold voltage with huge deduction on drain current. The newly designed lattice match double A10.54 In0.12 Ga0.34 N/ Al0.18 In0.04 Ga0.78 N barrier recess gate HEMT helps to boost the drain current by reducing the access resistance and enhancing the polarization charge density. The proposed HEMT exalted current density and transconductance by two times with significant shift of threshold voltage in positive axis than that of single barrier structure. Conclusively, the high performance novel double barrier recess gate E-mode HEMT will be key for real and efficient high power switching application.

本文言語English
ホスト出版物のタイトルProceedings of 2019 International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
編集者Francesco Driussi
出版社Institute of Electrical and Electronics Engineers Inc.
ISBN(電子版)9781728109404
DOI
出版ステータスPublished - 2019 9
外部発表はい
イベント24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019 - Udine, Italy
継続期間: 2019 9 42019 9 6

出版物シリーズ

名前International Conference on Simulation of Semiconductor Processes and Devices, SISPAD
2019-September

Conference

Conference24th International Conference on Simulation of Semiconductor Processes and Devices, SISPAD 2019
CountryItaly
CityUdine
Period19/9/419/9/6

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Computer Science Applications
  • Modelling and Simulation

フィンガープリント 「Barrier engineering of lattice matched alingan/ gan heterostructure toward high performance e-mode operation」の研究トピックを掘り下げます。これらがまとまってユニークなフィンガープリントを構成します。

引用スタイル