Bandwidth enhanced operation of single mode semiconductor laser by intensity modulated signal light injection

Hiroki Ishihara, Yosuke Saito, Wataru Kobayashi, Hiroshi Yasaka

研究成果: Article査読

17 被引用数 (Scopus)

抄録

3 dB bandwidth enhancement of single mode semiconductor lasers is confirmed numerically and experimentally when they are operated by intensity modulated signal light injection. 3 dB bandwidth is enlarged to 2.5 times of resonant frequency. The numerical analysis of rate equations predicts that the bandwidth enhancement is accomplished by the modal gain control of semiconductor lasers with injected intensity modulated signal light through non-linear gain coefficient term.

本文言語English
ページ(範囲)1549-1551
ページ数3
ジャーナルIEICE Transactions on Electronics
E95-C
9
DOI
出版ステータスPublished - 2012 9

ASJC Scopus subject areas

  • 電子材料、光学材料、および磁性材料
  • 電子工学および電気工学

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