Bandwidth-controlled metal-insulator transition in epitaxial PrNiO 3 ultrathin films induced by dimensional crossover

Enju Sakai, Kohei Yoshimatsu, Masatomo Tamamitsu, Koji Horiba, Atsushi Fujimori, Masaharu Oshima, Hiroshi Kumigashira

研究成果: Article査読

8 被引用数 (Scopus)

抄録

The authors have investigated the thickness-dependent physical properties of PrNiO3 ultrathin films epitaxially grown on LaAlO3 substrates. The strained PrNiO3 films exhibit metallic behavior and do not show any indication of temperature-driven metal-insulator transition (MIT) in bulk form, whereas an insulating ground state is realized in a thin limit. In situ photoemission measurements reveal that the observed thickness-dependent MIT is caused by the reduction in bandwidth due to the dimensional control of the films. These results strongly suggest that the MIT in PrNiO3 films can be controlled by changing the dimensionality under epitaxial constraint.

本文言語English
論文番号171609
ジャーナルApplied Physics Letters
104
17
DOI
出版ステータスPublished - 2014 4 28
外部発表はい

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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