Bandgap engineering of bilayer graphene for field-effect transistor channels

Eiichi Sano, Taiichi Otsuji

研究成果: Article

8 引用 (Scopus)

抜粋

A potential difference between the two layers of bilayer graphene caused by charge doping and/or an applied gate field can open a bandgap. In this paper, bandgap and charge controllability in graphene field-effect transistors (GFETs) with doped bilayer graphene channels is clarified by solving a one-dimensional Poisson's equation, including electron and hole concentrations derived from a tightbinding Hamiltonian. The calculations show that a high doping concentration of 1013 cm-2 is required to produce a bandgap of 0.3 eV and that this degrades the charge controllability in GFETs.

元の言語English
ページ(範囲)916051-916053
ページ数3
ジャーナルJapanese journal of applied physics
48
発行部数9 Part 1
DOI
出版物ステータスPublished - 2009 12 1

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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